ncep018n30gu.pdf datasheet:

http://www.ncepower.com NCEP018N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @ VGS=4.5V losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching Excellent gate charge x RDS(on) product(FOM) and synchronous rectification. Very low on-resistance RDS(on) Application 150 C operating temperature DC/DC Converter Pb-free lead plating Ideal for high-frequency switching and synchronous100% UIS TESTED! rectification 100% Vds TESTED! DFN 5X6 Top View Bottom