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ncep40t11g.pdf datasheet:

ncep40t11gncep40t11g

Pb Free Producthttp://www.ncepower.com NCEP40T11GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features VDS =40V,ID =110A Schematic Diagram RDS(ON)=2.4m (typical) @ VGS=10V D D D D D D D D RDS(ON)=3.3m (typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating 100% UIS tested S S S G G S S S Top View Bottom View Application DC/DC Converter Ideal for high-frequency swi

 

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 ncep40t11g.pdf Design, MOSFET, Power

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