ngb8207b.pdf datasheet:

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 365 VOLTSFeaturesVCE(on) = 1.5 V Typ @ Ideal for Coil-on-Plug and Driver-on-Coil ApplicationsIC = 10 A, VGE . 4.5 V Gate-Emitter ESD ProtectionC Temperature Compensated Gate-Collector Voltage Clamp LimitsStress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic orG RGMicroprocessor Devices Low Saturation VoltageRGE High Pulsed Current Capability Minimum Avalanche Energy - 500 m