ngtb15n120fl2.pdf datasheet:

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co-packaged free wheeling diode with a low forward voltage.http://onsemi.comFeatures Extremely Efficient Trench with Field Stop Technology 15 A, 1200 V TJmax = 175CVCEsat = 2.0 V Soft Fast Reverse Recovery DiodeEoff = 0.37 mJ Optimized for High Speed Switching 10 ms Short Circuit CapabilityC These are Pb-Free DevicesTypical Applications Solar InverterG Uninterruptible Power Inverter Supplies (UPS) WeldingEABSOLUTE MAXIMUM RATING