ngtb15n120fl2wg.pdf datasheet:

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.onsemi.comand fast co-packaged free wheeling diode with a low forward voltage.Features 15 A, 1200 V Extremely Efficient Trench with Field Stop TechnologyVCEsat = 2.0 V TJmax = 175CEoff = 0.37 mJ Soft Fast Reverse Recovery Diode Optimized for High Speed SwitchingC 10 ms Short Circuit Capability These are Pb-Free DevicesTypical ApplicationsG Solar Inverter Uninterruptible Power Inverter Supplies (UPS)E WeldingABSOLUTE MAXIMUM RATINGS