ngtb15n120ih.pdf datasheet:

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200 VFeaturesVCEsat = 2.10 V Extremely Efficient Trench with Fieldstop TechnologyEoff = 0.36 mJ Low Switching Loss Reduces System Power DissipationC Optimized for Low Losses in IH Cooker Application This is a Pb-Free DeviceTypical Applications Inductive Heating G Consumer Appliances Soft SwitchingEABSOLUTE MAXIMUM RATINGSRating Symbol Value UnitCollector-emitter voltage VCES 1200 VCollector current IC A@ TC = 25C 30@ TC = 100C 15Pulsed