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ngtb15n120ihr.pdf datasheet:

ngtb15n120ihrngtb15n120ihr

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200 VFeaturesVCEsat = 2.10 V Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power DissipationEoff = 0.34 mJ Optimized for Low Case Temperature in IH Cooker ApplicationC Reliable and Cost Effective Single Die Solution These are Pb-Free DevicesTypical Applications Inductive Heating G Consumer Appliances Soft Switching EABSOLUTE MAXIMUM RATINGSRating Symbol Value UnitCollector-emitter vo

 

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