ngtb15n135ihr.pdf datasheet:

NGTB15N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1350 VFeaturesVCEsat = 2.15 V Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown VoltageEoff = 0.42 mJ Optimized for Low Case Temperature in IH Cooker ApplicationC Reliable and Cost Effective Single Die Solution These are Pb-Free DevicesTypical Applications Inductive Heating G Consumer Appliances Soft Switching EABSOLUTE MAXIMUM RATINGSRating Symbol Value UnitCollector-emitter voltage VCES 1350 VCollecto