ngtb40n120ihl.pdf datasheet:

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device is a rugged co-packaged free wheeling diode with alow forward voltage.40 A, 1200 VFeaturesVCEsat = 1.90 V Low Saturation Voltage using Trench with Field Stop TechnologyEoff = 1.40 mJ Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker ApplicationC Low Gate Charge These are Pb-Free DevicesTypical ApplicationsG Inductive Heating Consumer AppliancesE Soft SwitchingABSOLUTE MAXIMUM RATINGS