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njw0281gt4tl.pdf datasheet:

njw0281gt4tlnjw0281gt4tl

NJW0281GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 15 ACI Base Current-Continuous 1.5 ABCollector Power DissipationP 150 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stg Ordering Information Product Package Packaging NJW0281GT4TL TO-3PN Tube V01 1www.sourcechips.comNJW0281GT4TLELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITV Collector-Emitter Breakd

 

Keywords - ALL TRANSISTORS DATASHEET

 njw0281gt4tl.pdf Design, MOSFET, Power

 njw0281gt4tl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 njw0281gt4tl.pdf Database, Innovation, IC, Electricity

 

 
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