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ntmfs4c09n.pdf datasheet:

ntmfs4c09nntmfs4c09n

NTMFS4C09NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.8 mW @ 10 V30 V 52 ACompliant8.5 mW @ 4.5 VApplicationsD (5-8) CPU Power Delivery DC-DC ConvertersMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value Unit G (4)Drain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGS 20 VS (1,2,3)Continuous Drain TA = 25C ID 16.4 AN-CHANNEL MOSFETCurrent RqJATA = 80C 12.3(Note 1)MARKINGPower Dissipation TA = 25C PD 2.51 WDIAGRAMSRqJA (Note 1)DContinuous Drain TA = 25C ID 25.3 AS DSO-8 FLAT LEADCurrent RqJA 10 sS 4C

 

Keywords - ALL TRANSISTORS DATASHEET

 ntmfs4c09n.pdf Design, MOSFET, Power

 ntmfs4c09n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c09n.pdf Database, Innovation, IC, Electricity

 

 
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