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ntmfs4c09nt1g.pdf datasheet:

ntmfs4c09nt1gntmfs4c09nt1g

NTMFS4C09NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.8 mW @ 10 VApplications30 V 52 A8.5 mW @ 4.5 V CPU Power Delivery DC-DC ConvertersD (5-8)MAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitDrain-to-Source Voltage VDSS 30 VG (4)Gate-to-Source Voltage VGS 20 VContinuous Drain TA = 25C ID 16.4 ACurrent RqJAS (1,2,3)TA = 80C 12.3(Note 1)N-CHANNEL MOSFETPower Dissipation TA = 25C PD 2.51 WRqJA (Note 1)MARKINGContinuous Drain TA = 25C ID 25.3 ADIAGRAMSCurrent RqJA 10 sTA = 80C 19.0D(Note 1)S D

 

Keywords - ALL TRANSISTORS DATASHEET

 ntmfs4c09nt1g.pdf Design, MOSFET, Power

 ntmfs4c09nt1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c09nt1g.pdf Database, Innovation, IC, Electricity

 

 
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