nvtfs6h888n.pdf datasheet:

MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelParameter Symbol Value UnitD (5 - 8)Drain-to-Source Voltage VDSS 80 VGate-to-Source Voltage VGS 20 VContinuous Drain TC = 25C ID 12 AG (4)Current RqJC TC = 100C 8.3(Notes 1, 2, 3, 4)SteadyState S (1, 2, 3)Power Dissipation TC = 25C PD 18 WRqJC (Notes 1, 2, 3)TC = 100C 9.2MARKING DIAGRAMContinuous Drain TA = 25C ID 4.7 A1Current RqJA 1S DTA = 10