p1503hv.pdf datasheet:

P1503HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V30V 9ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9IDContinuous Drain CurrentTA = 70 C7AIDM40Pulsed Drain Current1IASAvalanche Current 24EASAvalanche Energy L = 0.1mH 29 mJTA = 25 C2PDPower Dissipation WTA = 70 C1.28TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Ambient RqJA 62.5C / WJunction-to-Lead RqJL 251Pulse width limited by maximum junction temperature.Ver 1.1 1 2013-11-6P1503HVDual N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERIST

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