p1504edg.pdf datasheet:

P1504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-45A-40V100% Rg tested100% UIS testedTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTA= 25 C-45IDContinuous Drain CurrentTA= 70 C-36AIDM-150Pulsed Drain Current1IASAvalanche Current -45EASL=0.1mH 102 mJAvalanche Energy2TC= 25 C50PDPower Dissipation WTC= 70C32Tj, TstgJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Ambient RqJA 75C / WJunction-to-Case RqJC 2.51Pulse width limited by maximum junction temperature.2VDD = -20V . Starting TJ = 25C.REV 1.0 1 2014/5/12P150