p1504eis.pdf datasheet:

P1504EISP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-40V -38A100% Rg tested100% UIS testedTO-251(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-38IDContinuous Drain CurrentTC = 100 C-24AIDM-150Pulsed Drain Current1IASAvalanche Current -44EASAvalanche Energy L = 0.1mH 96.8 mJTC = 25 C34PDPower Dissipation WTC = 100 C14TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Ambient RqJA 75C / WJunction-to-Case RqJC 3.61Pulse width limited by maximum junction temperature.REV 1.0 1 2014/8/18P1504EISP-Channel Enhan