p1520ed.pdf datasheet:

P1520EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID198m @VGS = 10V200V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 20 VTC= 25 C15IDContinuous Drain CurrentTC= 100 C9.3AIDM45Pulsed Drain Current1IASAvalanche Current 15EASAvalanche Energy L=1.2mH 135 mJTC= 25 C83PDPower Dissipation WTC= 100C33Tj, TstgJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 1.5C / WJunction-to-Ambient RqJA 62.51Pulse width limited by maximum junction temperature.REV 1.0 1 2015/10/12P1520EDN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25