p1604ed.pdf datasheet:

P1604EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-40V 16m @VGS = -10V -43ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-43IDContinuous Drain CurrentTC = 100 C-34AIDM-130Pulsed Drain Current1IASAvalanche Current -40.8EASAvalanche Energy L = 0.1mH 83 mJTC = 25 C50PDPower Dissipation WTC = 100 C32TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 2.5 C / WJunction-to-Ambient RqJA 75 C / W1Pulse width limited by maximum junction temperature.Ver 1.1 1 2013-3-20P1604EDP-Channel Enhancement Mode MOSFETELECTRICAL