r07ds0353ej rjp30e3dpp.pdf datasheet:

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)C1. Gate2. Collector G3. Emitter123EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to Emitter voltage VCES 360 VGate to Emitter voltage VGES 30 VCollector current IC 40 ACollector peak current ic(peak) Note1 250 ACollector dissipation PC Note2 30 Wj-c Junction to case thermal impedance 4.17 C/ WJunction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes