r07ds0465ej rjp30h1dpd.pdf datasheet:

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A(Package name : TO-252)C41. Gate2. CollectorG3. Emitter1234. Collector (Flange)EAbsolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 360 VGate to emitter voltage VGES 30 VCollector current IC 30 ACollector peak current ic(peak) Note1 200 ACollector dissipation PC Note2 40 WJunction to case thermal impedance j-c 3.13 C/WJunction temperature Tj 150 C Storage temperature Ts