r6007jnx.pdf datasheet:

isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 7 ADI Drain Current-Single Pluse 21 ADMP Total Dissipation @T =25 46 WD CT Max. Operating Junction Temperature -55~150 JStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 2.7th j-c1isc website