r6535knz1.pdf datasheet:

isc N-Channel MOSFET Transistor R6535KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 35 ADI Drain Current-Single Pluse 105 ADMP Total Dissipation @T =25 102 WD CT Max. Operating Junction Temperature 150 JStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 1.25th j-c1isc websi