rjp30e2dpp-m0.pdf datasheet:

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)C1. Gate2. Collector G3. Emitter123EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 360 VGate to emitter voltage VGES 30 VCollector current Ic 35 A Collector peak current ic(peak) Note1 200 ACollector dissipation PC Note2 25 WJunction to case thermal impedance j-c 5 C/ WJunction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1.