ruh60100m.pdf datasheet:

RUH60100MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/100A,RDS (ON) =2.6m(Typ.)@VGS=10V DDDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications LED backlighting On board power for serverG Synchronous rectificationSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (TC=25C Unless Otherwise Noted)VDSS Drain-Source Voltage 60VVGSS Gate-Source Voltage 20TJ Maximum Junction Temperature 150 CTSTG Storage Temperature Range -55 to 150 CIS Diode Continuous Forward Current TC=25C 50 AMounted on Large Heat SinkTC=25C 400 AIDP 300s Pulse Drain Current TestedTC=25C 100Continuous Drain Current