ruh85100m-c.pdf datasheet:
RUH85100M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/100A,RDS (ON) =6.5m(Typ.)@VGS=10VDRDS (ON) =9.5m(Typ.)@VGS=4.5VD Ultra Low On-ResistanceD Fast Switching SpeedD 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technologyG Lead Free and Green Devices (RoHS Compliant)SSSPIN1DFN5060DApplications Synchronous Rectification for Flyback Converters PD AdaptorsG Charger for MobileSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (TC=25C Unless Otherwise Noted)VDSS Drain-Source Voltage 85VVGSS Gate-Source Voltage 20TJ Maximum Junction Temperature 150 CTSTG Storage Temperature Range -55 to 150 CIS Diode Continuous Forward Current TC=25C 100 AMounted on Large Heat SinkTC=25C 400 AIDP 300s Pulse Drain Current
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ruh85100m-c.pdf Design, MOSFET, Power
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