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sgb15n60.pdf datasheet:

sgb15n60sgb15n60

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking PackageSGB15N60 600V 15A 2.3V G15N60 PG-TO-263-3-2150C Maximum Ratings Parameter Symbol Value UnitCollector-emitter voltage VCE 600 VDC collector current IC A 31 TC = 25C 15 TC = 100C Pulsed collector current, tp limited b

 

Keywords - ALL TRANSISTORS DATASHEET

 sgb15n60.pdf Design, MOSFET, Power

 sgb15n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgb15n60.pdf Database, Innovation, IC, Electricity

 

 
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