si4435dy.pdf datasheet:

October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave drive Low gate charge (17nC typical) voltage ratings (4.5V 25V). Fast switching speed Applications Power management High performance trench technology for extremely low R DS(ON) Load switch Battery protection High power and current handling capability DD5 4DDDD6 3DD7 2SO-8 GG8 1SSSS SPin 1SO-8 SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Volt