si4435dytr.pdf datasheet:

PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon area. This benefit provides the designer with anextremely efficient device for use in battery and loadmanagement applications..The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety of powerapplications. With these improvements, multiple devicescan be used in an application with dramatically reducedboard space. The package is designed for vapor phase,SO-8infrared, or wave soldering