sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf datasheet:
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. The SJ-IGBT series provides lowVCE(sat)IC=30A 1.7 Vswitching losses, high energy efficiency andhigh avalanche ruggedness for motor control,solar application and welding machine, etc.Features High breakdown voltage to 600V for improved reliability Super junction Technology offering :High speed switchingHigh ruggedness, temperature stableSIF30N60G21B SIP30N60G21BLow VCE(sat)Easy parallel switching capability dueto positive temperature coefficient in
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