sl4435a.pdf datasheet:

SL4435A -30V/-10A P-Channel MOSFETFeaturesProduct Summary Trench Power LV MOSFET technologyVDS RDS(ON) MAX ID MAX High density cell design for Low RDS(ON)18m@10VD2S1-30V -10.5A High Speed switching D130m@4.5VDDDApplicationD Battery protection Power managementS Load switchSSGD D D DSOP-8 top view Schematic diagram4435: Device codeXXXXXX : Code4435XXXXXXGS S SMarking and pin assignment Absolute Maximum Ratings (TA=25unless otherwise noted)ParameterSymbol Rating UnitCommon Ratings (TC=25C Unless Otherwise Noted)Drain-Source Breakdown Voltage-30 VVDSGate-Source Voltage20 VVGSMaximum Junction Temperature150 CTJStorage Temperature Range-50 to 155 CTSTGDiode Continuous Forward CurrentTc=25 -10 ACISMounted on Large Heat Sink0Pulse Drain Current Tes

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