smbt3906.pdf datasheet:

PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3906 s2A Q68000-A4417 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0 40Emitter-base voltage VEB0 5Collector current IC 200 mATotal power dissipation, TS =71 C Ptot 330 mWJunction temperature Tj 150 CStorage temperature range Tstg 65 + 150Thermal ResistanceJunction - ambient2) Rth JA 310 K/WJunction - soldering point Rth JS 2401)For detailed information see chapter Package Outlines.2)Package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm2 Cu.5.91Semiconductor Group 1SMBT 3906Electrical Characteristicsat T