spa15n60c3.pdf datasheet:

isc N-Channel MOSFET Transistor SPA15N60C3FEATURES Drain-source on-resistance:RDS(on) 0.28@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 15 ADI Drain Current-Single Pulsed 45 ADMP Total Dissipation @T =25 34 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 3.71isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFET Transistor SPA15N60C3ELECTRICAL CHARACTERISTIC

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