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spb04n60c3.pdf datasheet:

spb04n60c3spb04n60c3

Isc N-Channel MOSFET Transistor SPB04N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSSDrain Current-ContinuousTc=254.5I AD2.8Tc=100I Drain Current-Single Pulsed 13.5 ADMP Total Dissipation @T =25 31 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 2.5/WRth(ch-a) Channel-to-ambient thermal resistance 621isc websitewww.iscsemi.cn isc & i

 

Keywords - ALL TRANSISTORS DATASHEET

 spb04n60c3.pdf Design, MOSFET, Power

 spb04n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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