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spb04n60s5.pdf datasheet:

spb04n60s5spb04n60s5

SPB04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB04N60S5 PG-TO263 Q67040-S4201 04N60S5Maximum RatingsParameter Symbol Value UnitAContinuous drain current IDTC = 25 C 4.5TC = 100 C 2.89Pulsed drain current, tp limited by Tjmax ID puls130 mJAvalanche energy, single pulse EASID = 3.4 A, VDD = 50 VEAR 0.4Avalanche energy, repetitive tAR limited by Tjmax1)ID = 4.5 A, VDD = 50 V4.5 AAvalanche current, repetitive tAR limited by Tjmax IARGate source voltage VGS V20VGSGate source voltage AC (f >1Hz) 30Power dissipation, TC = 25C Ptot 50 WCOperating and

 

Keywords - ALL TRANSISTORS DATASHEET

 spb04n60s5.pdf Design, MOSFET, Power

 spb04n60s5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spb04n60s5.pdf Database, Innovation, IC, Electricity

 

 
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