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spd04n60s5 spu04n60s5.pdf datasheet:

spd04n60s5_spu04n60s5spd04n60s5_spu04n60s5

SPU04N60S5SPD04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking04N60S5SPU04N60S5 P-TO251. Q67040-S4228SPD04N60S5 P-TO252. Q67040-S4202 04N60S5Maximum RatingsParameter Symbol Value UnitAContinuous drain current ID TC = 25 C 4.5TC = 100 C 2.89Pulsed drain current, tp limited by Tjmax ID puls130 mJAvalanche energy, single pulse EASID = 3.4 A, VDD = 50 VEAR 0.4Avalanche energy, repetitive tAR limited by Tjmax1)ID = 4.5 A, VDD = 50 V4.5 AAvalanche current, repetitive tAR limited by Tjmax IARGate source voltage VGS V20VGSGate source vol

 

Keywords - ALL TRANSISTORS DATASHEET

 spd04n60s5 spu04n60s5.pdf Design, MOSFET, Power

 spd04n60s5 spu04n60s5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd04n60s5 spu04n60s5.pdf Database, Innovation, IC, Electricity

 

 
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