spd04n80c3.pdf datasheet:

SPD04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3WDS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)PG-TO252-3 Ultra low gate charge Ultra low effective capacitancesCoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward )aswdType Package MarkingSPD04N80C3 PG-TO252-3 04N80C3Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 4 AD CT =100 C 2.5CI T =25 C 12Pulsed drain current2) D,pulse CE I =0.8 A, V =50 V