spd07n60s5 spu07n60s5.pdf datasheet:

SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Package Ordering Code Marking07N60S5SPU07N60S5 PG-TO251 Q67040-S4196SPD07N60S5 PG-TO252 Q67040-S4186 07N60S5Maximum RatingsParameter Symbol Value UnitAContinuous drain current IDTC = 25 C 7.3TC = 100 C 4.614.6Pulsed drain current, tp limited by Tjmax ID puls230 mJAvalanche energy, single pulse EASID = - A, VDD = 50 VEAR 0.5Avalanche energy, repetitive tAR limited by Tjmax1)ID = 7.3 A, VDD = 50 V7.3 AAvalanche current, repetitive tAR limited by Tjmax IARGate