spu04n60c3.pdf datasheet:

SPU04N60C3www.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 2.0COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS directive 2002/95/ECConfiguration SingleTO-251DGSN-Channel MOSFET G D STop ViewABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedPARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 650V Gate-Source Voltage VGS 30Continuous Drain Currente TC = 25 C 4.5VGS at 10 V IDContinuous Drain Current TC = 100 C 4.2 APulsed Drain Currenta IDM 18Linear Derating Factor 0.48 W/C Single Pulse Avalanche Energyb EAS 325 mJ Repetitive Avalanche