spu04n60c3.pdf datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPU04N60C3FEATURESWith To-251(IPAK) packageNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@T =25C 4.5I AD2.8T =125CI Drain Current-Single Pulsed 13.5 ADMP Total Dissipation @T =25 50 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 2.5/WR