spw15n60c3.pdf datasheet:

isc N-Channel MOSFET Transistor SPW15N60C3ISPW15N60C3FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 15 ADI Drain Current-Single Pulsed 45 ADMP Total Dissipation @T =25 156 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.8Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N