spw15n60cfd.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW15N60CFDISPW15N60CFDFEATURESStatic drain-source on-resistance:RDS(on)330mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 13.4 ADI Drain Current-Single Pulsed 33 ADMP Total Dissipation @T =25 240 WD CT Max. Operating Junction Temperature 150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.8Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi