ss8050.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Power Dissipation 3. COLLECTOR PCM : 1 W (TA=25.) : 2 W (TC=25.) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1