ss8050.pdf datasheet:

SS8050Silicon Epitaxial Planar TransistorFEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation:P =2W(T =25) C CAPPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 6 V EBO Collector Current -Continuous I 1.5 A C Collector Dissipation P 1 W C Junction Temperature T 150 jStorage Temperature T -65 to +150 stg www.jsmsemi.com 1/4JSMICRO SemiconductorSS8050Silicon Epitaxial Planar TransistorELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V I =100A,I =0 40 - - V (BR)C

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