ss8050b ss8050c ss8050d ss8050e.pdf datasheet:

Jiangsu Weida Semiconductor Co., Ltd.SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation TA=25CPD W1.0TJ,TstgJunction and Storage, Temperature -55 to +150 CELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)CharacteristicsSymbol Max UnitMin TypCollector-Base Breakdown VoltageV(BR)CBO 40 - V-IC=100A, IE=0Collector-Emitter Breakdown VoltageV(BR)CEO 25 -- VIC=0.1mA, IB=0Emitter Base Breakdown VoltageV(BR)EBO 5 -- VIE=100A, IC=0Collectorcut-offcurrentAICBO - -0.1VCB=40V, IE=0Emitter cut-off currentA- -0.1I