ss8050g.pdf datasheet:

SS8050GPlastic-Encapsulate Transistors Simplified outlineSS8050G TRANSISTOR NPN TO-92Features Power Dissipation 1.EMITTER PCM : 1 W (TA=25.) 2.BASE : 2 W (TC=25.) 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 Tstg Storage Temperature -55-150 Electrical CharacteristicsTamb=25 unless otherwise specified Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1 A Emitter cut-off cur