ss8050l ss8050h ss8050j.pdf datasheet:
SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 250 mW CR Thermal Resistance From Junction To Ambient 500 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1
Keywords - ALL TRANSISTORS DATASHEET
ss8050l ss8050h ss8050j.pdf Design, MOSFET, Power
ss8050l ss8050h ss8050j.pdf RoHS Compliant, Service, Triacs, Semiconductor
ss8050l ss8050h ss8050j.pdf Database, Innovation, IC, Electricity



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet