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ss8050l ss8050h ss8050j.pdf datasheet:

ss8050l_ss8050h_ss8050jss8050l_ss8050h_ss8050j

SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 250 mW CR Thermal Resistance From Junction To Ambient 500 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1

 

Keywords - ALL TRANSISTORS DATASHEET

 ss8050l ss8050h ss8050j.pdf Design, MOSFET, Power

 ss8050l ss8050h ss8050j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050l ss8050h ss8050j.pdf Database, Innovation, IC, Electricity

 

 
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