ss8050t.pdf datasheet:

SS8050TNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : 1.5 A1Collector-base voltage 23V(BR)CBO : 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COLLECTOR3OELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V 40 V(BR)CBO Ic= 100A I =0ECollector-emitter breakdown voltage V Ic= 0.1mA I =0 25 V(BR)CEO BEmitter-base breakdown voltage V 5 V(BR)EBO I =100A I =0E CCollector cut-off current I V =40 V , I =0 0.1CBO CB E ACollector cut-off current I V =20V , I =0 0.1CEO CE B AEmitter cut-off current I V =5V