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ss8050w-l ss8050w-h ss8050w-j.pdf datasheet:

ss8050w-l_ss8050w-h_ss8050w-jss8050w-l_ss8050w-h_ss8050w-j

SS8050WSS8050W TRANSISTOR (NPN)FEATURES Complimentary to SS8550W MARKING: Y1 SOT323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1 ACollector cut-off current ICEO VCB=20V, IE=0 0.1

 

Keywords - ALL TRANSISTORS DATASHEET

 ss8050w-l ss8050w-h ss8050w-j.pdf Design, MOSFET, Power

 ss8050w-l ss8050w-h ss8050w-j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050w-l ss8050w-h ss8050w-j.pdf Database, Innovation, IC, Electricity

 

 
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