ss8050w.pdf datasheet:

SS8050WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-323FEATURESCollectorDim Min Max33A 1.800 2.200Power dissipation11 B 1.150 1.3502 BasePCM : 0.2 WC 0.800 1.000Collector CurrentD 0.300 0.4002ICM : 1.5 A A G 1.200 1.400EmitterLH 0.000 0.100Collector-base voltageJ 0.100 0.2503V(BR)CBO : 40 VSTop ViewBK 0.350 0.500Operating & storage junction temperature 1 2L 0.590 0.720O OTj, Tstg : - 55 C ~ + 150 CS 2.000 2.400V GV 0.280 0.420All Dimension in mmCHJDKOELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V 40 V(BR)CBO Ic= 100A I =0ECollector-emitter breakdown voltage V Ic= 0.1mA I =0 25 V(BR)CEO BEmitter-base breakdown voltage V 5 V(B