ssf10n60a.pdf datasheet:

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V600Continuous Drain Current (TC=25oC)6.9IDAContinuous Drain Current (TC=100oC)4.3IDM Drain Current-Pulsed40 A1OVGS Gate-to-Source Voltage +V_ 30EAS Single Pulsed Avalanche Energy 2 519 mJOIAR Avalanche Current6.9 A1OEAR Repetitive Avalanche Energy mJ91Odv/dt Peak Diode Recovery dv/dt 3 3.0 V/nsOTotal Power Dissipation (TC=25oC) W90PDoLinear Derating Factor0.72 COperating J